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Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

M. Ruzzarin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, D. Ji, W. Li, S. Chan, A. Agarwal, C. Gupta, S. Keller, U. Mishra, and S. Chowdhury. IRPS, page 1-5. IEEE, (2019)

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Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Marco Matteo

Matteo Bertini

Other publications of authors with the same name

Modeling challenges for high-efficiency visible light-emitting diodes.F. Bertazzi, S. Dominici, M. Mandurrino, D. Robidas, X. Zhou, M. Vallone, M. Calciati, P. Debernardi, G. Verzellesi, M. Meneghini and 3 other author(s). RTSI, page 157-160. IEEE, (2015)Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.A. Stockman, M. Uren, A. Tajalli, M. Meneghini, B. Bakeroot, and P. Moens. ESSDERC, page 130-133. IEEE, (2017)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.A. Viey, W. Vandendaele, M. Jaud, J. Coignus, J. Cluzel, A. Krakovinsky, S. Martin, J. Biscarrat, R. Gwoziecki, V. Sousa and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Current crowding as a major cause for InGaN LED degradation at extreme high current density.N. Trivellin, M. Buffolo, C. Santi, E. Zanoni, G. Meneghesso, and M. Meneghini. IECON, page 1-6. IEEE, (2021)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Degradation of vertical GaN FETs under gate and drain stress.M. Ruzzarin, M. Meneghini, C. Santi, G. Meneghesso, E. Zanoni, M. Sun, and T. Palacios. IRPS, page 4. IEEE, (2018)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests.Z. Gao, F. Chiocchetta, F. Rampazzo, C. Santi, M. Fornasier, G. Meneghesso, M. Meneghini, and E. Zanoni. IRPS, page 1-5. IEEE, (2023)

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Disambiguation of "Meneghini, Matteo"

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URL
DOI
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DIN 1505
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Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Please choose a person to relate this publication to

Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Marco Matteo

Matteo Bertini

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Meneghini, Matteo"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Please choose a person to relate this publication to

Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Marco Matteo

Matteo Bertini

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).