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Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization., , , , and . DCIS, page 1-4. IEEE, (2018)Reliability simulation for analog ICs: Goals, solutions, and challenges., , , , , , , and . Integr., (2016)Effect of oxide breakdown on RS latches., , , and . Microelectron. Reliab., 47 (4-5): 581-584 (2007)Threshold voltage and on-current Variability related to interface traps spatial distribution., , , , , , , , and . ESSDERC, page 230-233. IEEE, (2015)Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells., , , , , , , and . SMACD, page 1-4. IEEE, (2017)Reliability of ultra-thin oxides in CMOS circuits., , , and . Microelectron. Reliab., 43 (9-11): 1353-1360 (2003)Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling., , , , , , and . ISCAS, page 1-5. IEEE, (2019)Including a stochastic model of aging in a reliability simulation flow., , , , , , , and . SMACD, page 1-4. IEEE, (2017)TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level., , , , , , , and . SMACD, page 197-200. IEEE, (2019)An IC Array for the Statistical Characterization of Time-Dependent Variability of Basic Circuit Blocks., , , , , , , and . SMACD, page 241-244. IEEE, (2019)