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Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies.

, , , , and . Microelectron. Reliab., 55 (9-10): 1714-1718 (2015)

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Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , and . ESSDERC, page 270-273. IEEE, (2012)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier., , , , , , , , , and 8 other author(s). IRPS, page 51-1. IEEE, (2022)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)Reliability of high voltage/high power L/S-band Hbt technology., , , , , , , , , and . Microelectron. Reliab., 50 (9-11): 1543-1547 (2010)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , and 2 other author(s). IRPS, page 11. IEEE, (2022)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies., , , , and . Microelectron. Reliab., 55 (9-10): 1714-1718 (2015)