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Disambiguation of "Ghibaudo, Gérard"

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Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI.

, , , , , , , and . ISCAS, page 1452-1455. IEEE, (2013)

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Gérard Gäfgen

Walter Gérard

Gérard Sprüssel

Bruno Gérard

Emilie Gérard

 

Other publications of authors with the same name

Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors., , , and . Microelectron. Reliab., 41 (6): 855-860 (2001)Failures in ultrathin oxides: Stored energy or carrier energy driven?, , , , and . Microelectron. Reliab., 41 (9-10): 1367-1372 (2001)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)Electrical characterization of FDSOI CMOS devices.. ESSDERC, page 135-141. IEEE, (2016)New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs., , , , , , and . IRPS, page 1. IEEE, (2015)Physically-based extraction methodology for accurate MOSFET degradation assessment., , , , , , and . Microelectron. Reliab., 55 (9-10): 1417-1421 (2015)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides., , , , , , and . Microelectron. Reliab., 45 (12): 1842-1854 (2005)Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown., , , , and . Microelectron. Reliab., 45 (5-6): 841-844 (2005)Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI., , , , , , , and . ISCAS, page 1452-1455. IEEE, (2013)