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Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process., , , , , , и . ESSDERC, стр. 356-359. IEEE, (2022)Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET., , , , , , , , , и 8 other автор(ы). CoRR, (2023)Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications., , , , , , , , , и 3 other автор(ы). IMW, стр. 1-4. IEEE, (2023)Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out., , , , и . IRPS, стр. 1-5. IEEE, (2024)Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application, , , , , , , , , и 2 other автор(ы). IEEE Electron Device Lett., 41 (12): 1762-1765 (15.10.2020)Charge trapping challenges of CMOS embedded complementary FeFETs., , , , , , , , , и . IMW, стр. 1-4. IEEE, (2024)Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology., , , , , , , , и . IMW, стр. 1-4. IEEE, (2021)Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window., , , , , , , , , и 2 other автор(ы). VLSI Technology and Circuits, стр. 395-396. IEEE, (2022)Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines., , , , , , , , , и 9 other автор(ы). CoRR, (2022)Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate., , , , , , , , , и 15 other автор(ы). CoRR, (2024)