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Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament., , , , , , и . NVMTS, стр. 1-5. IEEE, (2017)High-k Dielectrics and Metal Gates for Future Generation Memory Devices, , , , , , , , , и 28 other автор(ы). ECS Transactions, 19 (1): 29--40 (2009)Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics., , , , , , , , и . CoRR, (2024)Impact of mechanical strain on wakeup of HfO2 ferroelectric memory., , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory., , , , , , , , , и 4 other автор(ы). IRPS, стр. 7. IEEE, (2024)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-7. IEEE, (2019)Doped GeSe materials for selector applications., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 168-171. IEEE, (2017)Modeling and spectroscopy of ovonic threshold switching defects., , , , , , и . IRPS, стр. 1-5. IEEE, (2021)Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode., , , , , , , , , и 3 other автор(ы). VLSI Technology and Circuits, стр. 312-313. IEEE, (2022)