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A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.

M. Chang, C. Wu, J. Hung, Y. King, C. Lin, M. Ho, C. Kuo, and S. Sheu. APCCAS, page 695-698. IEEE, (2014)

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Ya Zhang

Elion Chin

Erika Chin

Ya Yang

Chin Buranadham

Other publications of authors with the same name

High Density Embedded 3D Stackable Via RRAM in Advanced MCU Applications.Y. Huang, Y. Hsieh, Y. Lin, Y. Chih, E. Wang, J. Chang, Y. King, and C. Lin. VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.M. Chang, C. Wu, C. Kuo, S. Shen, K. Lin, S. Yang, Y. King, C. Lin, and Y. Chih. ISSCC, page 434-436. IEEE, (2012)A novel single poly-silicon EEPROM using trench floating gate.M. Wu, S. Feng, and Y. King. MTDT, page 35-37. IEEE Computer Society, (2005)An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.M. Chang, S. Shen, C. Liu, C. Wu, Y. Lin, S. Wu, C. Huang, H. Lai, Y. King, C. Lin and 3 other author(s). ISSCC, page 206-208. IEEE, (2011)A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors.C. Xue, W. Chen, J. Liu, J. Li, W. Lin, W. Lin, J. Wang, W. Wei, T. Chang, T. Chang and 12 other author(s). ISSCC, page 388-390. IEEE, (2019)A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors.W. Chen, K. Li, W. Lin, K. Hsu, P. Li, C. Yang, C. Xue, E. Yang, Y. Chen, Y. Chang and 7 other author(s). ISSCC, page 494-496. IEEE, (2018)A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.A. Lee, C. Lo, C. Lin, W. Chen, K. Hsu, Z. Wang, F. Su, Z. Yuan, Q. Wei, Y. King and 8 other author(s). IEEE J. Solid State Circuits, 52 (8): 2194-2207 (2017)A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving > 4× Faster Clock Frequency and > 6× Higher Restore Speed.Z. Wang, Y. Liu, A. Lee, F. Su, C. Lo, Z. Yuan, J. Li, C. Lin, W. Chen, H. Chiu and 7 other author(s). IEEE J. Solid State Circuits, 52 (10): 2769-2785 (2017)FinFET CMOS logic gates with non-volatile states for reconfigurable computing systems.Y. Chiang, W. Chien, Y. Chih, J. Chang, C. Lin, and Y. King. Integr., (2019)19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme.M. Chang, J. Wu, T. Chien, Y. Liu, T. Yang, W. Shen, Y. King, C. Lin, K. Lin, Y. Chih and 2 other author(s). ISSCC, page 332-333. IEEE, (2014)

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Disambiguation of "King, Ya-Chin"

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A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.

Please choose a person to relate this publication to

Ya Zhang

Elion Chin

Erika Chin

Ya Yang

Chin Buranadham

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "King, Ya-Chin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.

Please choose a person to relate this publication to

Ya Zhang

Elion Chin

Erika Chin

Ya Yang

Chin Buranadham

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.