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Digital ground bounce reduction by supply current shaping and clock frequency Modulation., , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 24 (1): 65-76 (2005)Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors., , , , , , , , , and 4 other author(s). IEEE J. Solid State Circuits, 40 (9): 1922-1931 (2005)Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS., , , , and . IEEE J. Solid State Circuits, 57 (5): 1300-1313 (2022)A Single-Channel, 600-MS/s, 12-b, Ringamp-Based Pipelined ADC in 28-nm CMOS., , , , and . IEEE J. Solid State Circuits, 54 (2): 403-416 (2019)Digital circuit capacitance and switching analysis for ground bounce in ICs with a high-ohmic substrate., , , , , , , , and . IEEE J. Solid State Circuits, 39 (7): 1119-1130 (2004)A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS., , , , and . ISSCC, page 536-537. IEEE, (2008)Modeling FinFET metal gate stack resistance for 14nm node and beyond., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Ultra-wideband channel model for communication around the human body., , , , , and . IEEE J. Sel. Areas Commun., 24 (4): 927-933 (2006)A plug-and-play wideband RF circuit ESD protection methodology: T-diodes., , , , , , , , , and . Microelectron. Reliab., 49 (12): 1440-1446 (2009)Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification., , , , , , , and . Sensors, 18 (11): 3683 (2018)