Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A Study on Knocking Analysis Simulator Based on CRDI Engine ECU., , and . FGIT-GDC/IESH/CGAG, volume 351 of Communications in Computer and Information Science, page 255-262. Springer, (2012)18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution., , , , , , , , , and 7 other author(s). ISSCC, page 314-315. IEEE, (2016)An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM., , , , , , , , , and 7 other author(s). A-SSCC, page 139-142. IEEE, (2018)A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process., , , , , , , , , and 16 other author(s). VLSI Circuits, page 147-148. IEEE, (2018)A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques., , , , , , , , , and 16 other author(s). ISSCC, page 278-279. IEEE, (2008)An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion., , , , , , , , , and 19 other author(s). ISSCC, page 492-617. IEEE, (2007)23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS., , , , , , , , and . ISSCC, page 400-401. IEEE, (2017)A Study on Dynamic Gateway System for MOST GATEWAY Scheduling Algorithm in MOST25 and MOST150 Networks., and . ICHIT (1), volume 6935 of Lecture Notes in Computer Science, page 45-53. Springer, (2011)Design, packaging, and architectural policy co-optimization for DC power integrity in 3D DRAM., , , , , , and . DAC, page 91:1-91:6. ACM, (2015)17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs., , , , , , , , , and . ISSCC, page 1-3. IEEE, (2015)