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Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit.

S. Beek, P. Roussel, B. O'Sullivan, R. Degraeve, S. Cosemans, D. Linten, и G. Kar. ESSDERC, стр. 146-149. IEEE, (2018)

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Jamie O'Sullivan

Molecular cooling and emissions in large scale simulations of protostellar jetsJ. O'Sullivan. Uni Heidelberg, (2009)

Donal O'Sullivan

Ilse O'Sullivan

Donal O'Sullivan

Другие публикации лиц с тем же именем

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit.S. Beek, P. Roussel, B. O'Sullivan, R. Degraeve, S. Cosemans, D. Linten, и G. Kar. ESSDERC, стр. 146-149. IEEE, (2018)Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon.P. Hsieh, A. Tsiara, B. O'Sullivan, D. Yudistira, M. Baryshnikova, G. Groeseneken, B. Kunert, M. Pantouvaki, J. Campenhout, и I. Wolf. IRPS, стр. 9. IEEE, (2022)The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.T. Grasser, B. Kaczer, B. O'Sullivan, G. Rzepa, B. Stampfer, и M. Waltl. IRPS, стр. 1-6. IEEE, (2020)Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.B. Truijen, B. O'Sullivan, M. Alam, D. Claes, M. Thesberg, P. Roussel, A. Chasin, G. den Bosch, B. Kaczer, и J. Houdt. IRPS, стр. 12-1. IEEE, (2022)Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.B. O'Sullivan, S. Beek, P. Roussel, S. Rao, W. Kim, S. Couet, J. Swerts, F. Yasin, D. Crotti, D. Linten и 1 other автор(ы). IRPS, стр. 5-1. IEEE, (2018)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.B. O'Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2019)Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors.A. Lesniewska, S. Srinivasan, J. Campenhout, B. O'Sullivan, и K. Croes. IRPS, стр. 1-7. IEEE, (2019)STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application.S. Rao, W. Kim, S. Beek, S. Kundu, M. Perumkunnil, S. Cosemans, F. Yasin, S. Couet, R. Carpenter, B. O'Sullivan и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2021)Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution.S. Beek, S. Rao, S. Kundu, W. Kim, B. O'Sullivan, S. Cosemans, F. Yasin, R. Carpenter, S. Couet, S. Sharifi и 3 other автор(ы). IRPS, стр. 1-5. IEEE, (2021)Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs.S. Beek, B. O'Sullivan, S. Couet, D. Crotti, D. Linten, и G. Kar. IRPS, стр. 1-5. IEEE, (2020)

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Please choose a person to relate this publication to

Jamie O'Sullivan

Donal O'Sullivan

Ilse O'Sullivan

Donal O'Sullivan

Donal O'Sullivan

Другие публикации лиц с тем же именем

Disambiguation