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First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.

, , , , , , , , и . IMW, стр. 1-4. IEEE, (2021)

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Jan van Neerven

Jan van Weeren

Jan van Üüm

Jan ˜vanœ Calker

Jan Van Goethem

 

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Novel level-identifying circuit for flash multilevel memories., , , и . IEEE J. Solid State Circuits, 33 (7): 1090-1095 (1998)Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics., , , , , , , , и . CoRR, (2024)Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness., , , , и . Microelectron. Reliab., 51 (5): 919-924 (2011)Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique., , , , и . Microelectron. Reliab., 47 (4-5): 508-512 (2007)Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors., , , , , , , , , и 1 other автор(ы). IRPS, стр. 10-1. IEEE, (2022)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , и . IMW, стр. 1-4. IEEE, (2021)Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks., , , , , , , , , и . IRPS, стр. 12-1. IEEE, (2022)Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND., , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification., , , , , , , , , и 1 other автор(ы). IMW, стр. 1-4. IEEE, (2024)Doped GeSe materials for selector applications., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 168-171. IEEE, (2017)