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Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , и . IRPS, стр. 3. IEEE, (2015)Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements., , , , и . IEEE Trans. Very Large Scale Integr. Syst., 19 (9): 1569-1582 (2011)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , и . IRPS, стр. 1-10. IEEE, (2023)Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation., , , , , и . IRPS, стр. 1-9. IEEE, (2023)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , и . IRPS, стр. 6. IEEE, (2022)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , и 2 other автор(ы). IRPS, стр. 10. IEEE, (2022)Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress., , , , , , , , , и 1 other автор(ы). IRPS, стр. 10. IEEE, (2022)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 262-265. IEEE, (2019)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-7. IEEE, (2019)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 218-225. IEEE, (2015)