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Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

, , , , , , , , , and . IRPS, page 10. IEEE, (2022)

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Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs., , , , , , , , , and 2 other author(s). ESSDERC, page 299-302. IEEE, (2021)Mechanical and thermal reliability of printed organic thin-film transistor., , , , and . Microelectron. Reliab., 50 (9-11): 1884-1887 (2010)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , and 5 other author(s). ESSDERC, page 295-298. IEEE, (2021)On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes., , , , , , , , , and . ESSDERC, page 126-129. IEEE, (2017)Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage., , , , , , , , , and . IRPS, page 10. IEEE, (2022)Study of forward AC stress degradation of GaN-on-Si Schottky diodes., , , , , , and . Microelectron. Reliab., (2018)Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)., , , , , , , , , and . IRPS, page 1-8. IEEE, (2023)Enhanced printed temperature sensors on flexible substrate., , , , , , , and . Microelectron. J., 45 (12): 1621-1626 (2014)Printed actuators made with electroactive polymers on flexible substrates., , , and . NEMS, page 68-71. IEEE, (2014)