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Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs.

, , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)

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Ferdinando Marinelli

Ferdinando Poli

Ferdinando Giuseppe Menga

 

Другие публикации лиц с тем же именем

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)., , , , , , , , , и . IRPS, стр. 1-8. IEEE, (2023)Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage., , , , , , , , , и . IRPS, стр. 10. IEEE, (2022)Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs., , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)A novel GaN HEMT degradation mechanism observed during HTST test., , , и . IRPS, стр. 4-1. IEEE, (2018)Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , и 2 other автор(ы). IRPS, стр. 1-6. IEEE, (2019)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 295-298. IEEE, (2021)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2021)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs., , , , , , , и . IRPS, стр. 1-6. IEEE, (2023)