( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
A novel GaN HEMT degradation mechanism observed during HTST test.

, , , и . IRPS, стр. 4-1. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Rolf Chini

Ioanna Chini

Camil Chiniara

Alessandro Valeri

Fluorescence resonance energy transfer between multiple chromophores studied by single-molecule spectroscopy. Uni Düsseldorf, (2009)

Alessandro Zivelonghi

 

Другие публикации лиц с тем же именем

A novel GaN HEMT degradation mechanism observed during HTST test., , , и . IRPS, стр. 4-1. IEEE, (2018)Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs., , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs., , , , , , , , , и 7 other автор(ы). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs., , , , , , , , и . IRPS, стр. 5. IEEE, (2022)Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs., , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps., , и . ESSDERC, стр. 372-375. IEEE, (2022)On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs., , , , , , , , , и 7 other автор(ы). Microelectron. Reliab., (2018)Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs., , , , , и . IRPS, стр. 1-5. IEEE, (2021)Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications., , и . IRPS, стр. 11. IEEE, (2022)Traps localization and analysis in GaN HEMTs., , , , и . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)