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Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V., , , , , и . IRPS, стр. 1-7. IEEE, (2023)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-7. IEEE, (2019)Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2024)Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics., , , , , , , , , и . IRPS, стр. 36. IEEE, (2024)Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability., , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements., , , , , , , , , и . VLSI Technology and Circuits, стр. 340-342. IEEE, (2022)Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation., , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli., , , и . SICE, стр. 749-754. IEEE, (2022)Study on mechanism of thermal curing in ultra-thin gate dielectrics., , и . IRPS, стр. 3. IEEE, (2018)Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)