( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

, , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Fest

Enrico Streit

 

Другие публикации лиц с тем же именем

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , и . IRPS, стр. 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , и . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Improving the reliability and safety of automotive electronics., и . IEEE Micro, 13 (1): 30-48 (1993)Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , и . ICICDT, стр. 1-4. IEEE, (2015)Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs., , , , и . IRPS, стр. 17. IEEE, (2024)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , и . IRPS, стр. 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , и . IRPS, стр. 4. IEEE, (2018)Traps localization and analysis in GaN HEMTs., , , , и . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)