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Другие публикации лиц с тем же именем

Improving the reliability and safety of automotive electronics., и . IEEE Micro, 13 (1): 30-48 (1993)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , и . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , и . IRPS, стр. 3. IEEE, (2015)Charge Trapping in GaN Power Transistors: Challenges and Perspectives., , , , , , , , , и 1 other автор(ы). BCICTS, стр. 1-4. IEEE, (2021)Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , и . ICICDT, стр. 1-4. IEEE, (2015)Modeling of Substrate Noise Injected by Digital Libraries., , , , , , , и . ISQED, стр. 488-492. IEEE Computer Society, (2001)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , и 4 other автор(ы). ESSDERC, стр. 381-384. IEEE, (2014)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , и . IRPS, стр. 2. IEEE, (2015)