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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , и . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Improving the reliability and safety of automotive electronics., и . IEEE Micro, 13 (1): 30-48 (1993)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , и . IRPS, стр. 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Traps localization and analysis in GaN HEMTs., , , , и . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , и . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics., , , и . Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)Optimization of ESD protection structures suitable for BCD6 smart power technology., , , , , и . Microelectron. Reliab., 43 (9-11): 1589-1594 (2003)Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , и . ICICDT, стр. 1-4. IEEE, (2015)