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Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.

, , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2024)

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Viktor den Bosch

Denise van den Nouland

Jörg van den Hoff

Hendrik ˜van denœ Bussche

Johannes van den Boom

 

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Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND., , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks., , , , , , , , , и . IRPS, стр. 12-1. IEEE, (2022)At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells., , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Impact of Mechanical Stress on the Electrical Performance of 3D NAND., , , , , , и . IRPS, стр. 1-5. IEEE, (2019)High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction., , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)A comprehensive variability study of doped HfO2 FeFET for memory applications., , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Enabling 3D NAND Trench Cells for Scaled Flash Memories., , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Liquid Memory and the Future of Data Storage., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering., , , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS., и . Microelectron. Reliab., 48 (8-9): 1300-1305 (2008)