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Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

, , , , , , , , и . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)

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Nicola Rampazzo

Fabiana Cossavella

Fabiana Ganz

Fabiana Ziper

Fabiana Perocchi

 

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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , и . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , и . ESSDERC, стр. 389-392. IEEE, (2014)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , и 4 other автор(ы). IRPS, стр. 1-2. IEEE, (2021)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests., , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs., , , , , , , , , и 7 other автор(ы). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier., , , , , , , , , и 8 other автор(ы). IRPS, стр. 51-1. IEEE, (2022)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-10. IEEE, (2020)Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects., , , , , , , , , и 3 other автор(ы). IRPS, стр. 5. IEEE, (2024)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , и 4 other автор(ы). ESSDERC, стр. 381-384. IEEE, (2014)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , и 2 other автор(ы). IRPS, стр. 11. IEEE, (2022)