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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

F. Chiocchetta, C. Santi, F. Rampazzo, K. Mukherjee, J. Grünenpütt, D. Sommer, H. Blanck, B. Lambert, A. Gerosa, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 11. IEEE, (2022)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Streit

Enrico Körner

Other publications of authors with the same name

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella. Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Improving the reliability and safety of automotive electronics.E. Zanoni, and P. Pavan. IEEE Micro, 13 (1): 30-48 (1993)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Trapping induced parasitic effects in GaN-HEMT for power switching applications.G. Meneghesso, M. Meneghini, E. Zanoni, P. Vanmeerbeek, and P. Moens. ICICDT, page 1-4. IEEE, (2015)Modeling of Substrate Noise Injected by Digital Libraries.S. Zanella, A. Neviani, E. Zanoni, P. Miliozzi, E. Charbon, C. Guardiani, L. Carloni, and A. Sangiovanni-Vincentelli. ISQED, page 488-492. IEEE Computer Society, (2001)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.I. Rossetto, F. Rampazzo, S. Gerardin, M. Meneghini, M. Bagatin, A. Zanandrea, A. Paccagnella, G. Meneghesso, E. Zanoni, C. Dua and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)Traps localization and analysis in GaN HEMTs.A. Chini, F. Soci, G. Meneghesso, M. Meneghini, and E. Zanoni. Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.A. Stocco, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck, and E. Zanoni. Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)

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Disambiguation of "Zanoni, Enrico"

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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Streit

Enrico Körner

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zanoni, Enrico"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Streit

Enrico Körner

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.