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Disambiguation of "Zanoni, Enrico"

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Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress.

, , , , , , and . Microelectron. Reliab., 50 (9-11): 1523-1527 (2010)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Meier

Enrico Körner

 

Other publications of authors with the same name

Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1370-1374 (2008)Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , and . ICICDT, page 1-4. IEEE, (2015)Charge Trapping in GaN Power Transistors: Challenges and Perspectives., , , , , , , , , and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , and . IRPS, page 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 4. IEEE, (2018)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , and 2 other author(s). IRPS, page 11. IEEE, (2022)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics., , , and . Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)Optimization of ESD protection structures suitable for BCD6 smart power technology., , , , , and . Microelectron. Reliab., 43 (9-11): 1589-1594 (2003)